RF-Lambda Gallium Nitride (GaN) Template

Product overview

GaN (gallium nitride) templates refer to a thin layer of single crystalline GaN, typically less than
than 100 microns, grown epitaxially on a foreign substrate, (such as sapphire). Compared to free-standing GaN substrate, GaN template is an alternative solution for device manufacturers. With high volume
and low production costs, GaN template can replace sapphire in LEDs, increasing up to 50% of the capacity of MOCVD reactors.
In addition, GaN stencil typically has a lower dislocation density than MOCVD GaN grown on sapphire. This is a favorable factor for UV devices, as it is more sensitive to dislocation density than blue LEDs.

The manufacturer's current offerings with datasheets are available HERE.

Contact us for a price quote. We will be happy to advise you on the selection of suitable devices.

tel. (22) 641-15-47

e-mail: ndn@ndn.com.pl

RF-Lambda Gallium Nitride (GaN) Template